Author Affiliations
Abstract
1 Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Zijingang Campus, Hangzhou 310058, China
2 State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
3 Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
4 Electrical and Computer Engineering Department, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
5 Wuhan National Laboratory for Optoelectronics & School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
6 National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China
7 State Key Laboratory of Optical Communication Technologies and Networks, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China
8 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
In recent years, optical modulators, photodetectors, (de)multiplexers, and heterogeneously integrated lasers based on silicon optical platforms have been verified. The performance of some devices even surpasses the traditional III-V and photonic integrated circuit (PIC) platforms, laying the foundation for large-scale photonic integration. Silicon photonic technology can overcome the limitations of traditional transceiver technology in high-speed transmission networks to support faster interconnection between data centers. In this article, we will review recent progress for silicon PICs. The first part gives an overview of recent achievements in silicon PICs. The second part introduces the silicon photonic building blocks, including low-loss waveguides, passive devices, modulators, photodetectors, heterogeneously integrated lasers, and so on. In the third part, the recent progress on high-capacity silicon photonic transceivers is discussed. In the fourth part, we give a review of high-capacity silicon photonic networks on chip.
Photonics Research
2022, 10(9): A106
Author Affiliations
Abstract
1 Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
2 Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan
3 Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
4 Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quantum dot lasers grown directly on exact (001) GaP/Si. Effectively, a single-mode operation was observed at 1.3 μm with modes at spectrally distant locations. High temperature stability with T0103 K has been achieved with a low threshold of 3 mA for microrings with an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Small signal modulation responses were measured for the first time for the microrings directly grown on silicon, and a 3 dB bandwidth of 6.5 GHz was achieved for a larger ring with an outer ring radius of 50 μm and a ring waveguide width of 4 μm. The directly modulated microring laser, monolithically integrated on a silicon substrate, can incur minimal real estate cost while offering full photonic functionality.
Quantum-well, -wire and -dot devices Semiconductor lasers Integrated optics materials Microcavities 
Photonics Research
2018, 6(8): 08000776

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